Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells
Identifieur interne : 001180 ( Russie/Analysis ); précédent : 001179; suivant : 001181Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells
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Abstract
We have studied the transient behavior of a sharp emission line, which emerges close to the heavy-hole (hh) exciton photoluminescence line in a 1.6-monolayer-thick InAs layer embedded in a GaAs matrix. The sharp emission line appears under resonant excitation of the light-hole (lh) exciton transition, whose energy separation from the hh exciton transition amounts to one GaAs LO phonon. We have measured the decay time of the sharp emission line in addition to the lifetime of the hh and the lh excitons, using time-correlated single-photon counting and two-wavelength picosecond time-resolved pump-probe transmission techniques. We find that the decay time of the sharp emission line is equal to the lh exciton lifetime for excitation on resonance but that it strongly decreases for excitation off resonance. We conclude that, whereas the sharp line originates from doubly resonant Raman scattering for off-resonant excitation, it is predominantly due to resonant luminescence for resonant excitation. We derive a lh exciton dephasing time of 40 ps, which suggests that the length scale of potential fluctuations from disorder is larger than the lh exciton Bohr radius. © 1996 Optical Society of America.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells</title><author><name sortKey="Brubach, J" uniqKey="Brubach J">J. Brubach</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven</wicri:regionArea><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Haverkort, J E M" uniqKey="Haverkort J">J. E. M. Haverkort</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven</wicri:regionArea><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Wolter, J H" uniqKey="Wolter J">J. H. Wolter</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven</wicri:regionArea><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Wang, P D" uniqKey="Wang P">P. D. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Torres, C M S" uniqKey="Torres C">C. M. S. Torres</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Zhukov, A E" uniqKey="Zhukov A">A. E. Zhukov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kop Ev, P S" uniqKey="Kop Ev P">P. S. Kop Ev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0102315</idno><date when="1996-06">1996-06</date><idno type="stanalyst">PASCAL 97-0102315 AIP</idno><idno type="RBID">Pascal:97-0102315</idno><idno type="wicri:Area/Main/Corpus">018C51</idno><idno type="wicri:Area/Main/Repository">019C29</idno><idno type="wicri:Area/Russie/Extraction">001180</idno></publicationStmt><seriesStmt><idno type="ISSN">0740-3224</idno><title level="j" type="abbreviated">J. Opt. Soc. Am., B Opt. phys.</title><title level="j" type="main">Journal of the Optical Society of America. B, Optical physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Photoluminescence</term><term>Raman spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Indium arséniure</term><term>Gallium arséniure</term><term>Photoluminescence</term><term>Spectre Raman</term><term>Exciton</term><term>4270N</term><term>7866F</term><term>7820J</term><term>7847</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied the transient behavior of a sharp emission line, which emerges close to the heavy-hole (hh) exciton photoluminescence line in a 1.6-monolayer-thick InAs layer embedded in a GaAs matrix. The sharp emission line appears under resonant excitation of the light-hole (lh) exciton transition, whose energy separation from the hh exciton transition amounts to one GaAs LO phonon. We have measured the decay time of the sharp emission line in addition to the lifetime of the hh and the lh excitons, using time-correlated single-photon counting and two-wavelength picosecond time-resolved pump-probe transmission techniques. We find that the decay time of the sharp emission line is equal to the lh exciton lifetime for excitation on resonance but that it strongly decreases for excitation off resonance. We conclude that, whereas the sharp line originates from doubly resonant Raman scattering for off-resonant excitation, it is predominantly due to resonant luminescence for resonant excitation. We derive a lh exciton dephasing time of 40 ps, which suggests that the length scale of potential fluctuations from disorder is larger than the lh exciton Bohr radius. © 1996 Optical Society of America.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0740-3224</s0></fA01><fA02 i1="01"><s0>JOBPDE</s0></fA02><fA03 i2="1"><s0>J. Opt. Soc. Am., B Opt. phys.</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>BRUBACH (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>HAVERKORT (J. E. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>WOLTER (J. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (P. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA11 i1="06" i2="1"><s1>TORRES (C. M. S.)</s1></fA11><fA11 i1="07" i2="1"><s1>ZHUKOV (A. E.)</s1></fA11><fA11 i1="08" i2="1"><s1>KOP'EV (P. S.)</s1></fA11><fA11 i1="09" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA14 i1="01"><s1>Interuniversity Institute on Communication Technology: Basic Research and Applications, Eindhoven University of Technology, Department of Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>1224-1231</s1></fA20><fA21><s1>1996-06</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>131 B</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0102315</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of the Optical Society of America. B, Optical physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied the transient behavior of a sharp emission line, which emerges close to the heavy-hole (hh) exciton photoluminescence line in a 1.6-monolayer-thick InAs layer embedded in a GaAs matrix. The sharp emission line appears under resonant excitation of the light-hole (lh) exciton transition, whose energy separation from the hh exciton transition amounts to one GaAs LO phonon. We have measured the decay time of the sharp emission line in addition to the lifetime of the hh and the lh excitons, using time-correlated single-photon counting and two-wavelength picosecond time-resolved pump-probe transmission techniques. We find that the decay time of the sharp emission line is equal to the lh exciton lifetime for excitation on resonance but that it strongly decreases for excitation off resonance. We conclude that, whereas the sharp line originates from doubly resonant Raman scattering for off-resonant excitation, it is predominantly due to resonant luminescence for resonant excitation. 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